➀ Jinfengshan Lab achieves global first 8-inch silicon-based polar GaN substrate;
➁ China's first 100nm high-performance GaN flow PDK platform;
➂ 20-meter long-distance wireless energy transmission technology;
➃ Breakthrough in GaN material, device, and industrial application;
➄ Enabling 'instant charging' for mobile phones and 'while-driving charging' for electric vehicles;
➅ Accelerating the localization of high-end devices such as 6G base stations and autonomous driving radars.